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Volumn 3334, Issue , 1998, Pages 56-66

CD control comparison of step & repeat versus step & scan DUV lithography for sub-0.25 μm gate printing

Author keywords

Aberration; CD control; Deep UV lithography; Electrical linewidth measurements; Metrology; Scanning electron microscopy; Step repeat; Step scan

Indexed keywords

ABERRATIONS; ELECTRON MICROSCOPY; INTEGRATED CIRCUITS; KRYPTON; LINEWIDTH; LITHOGRAPHY; MICROMETERS; OPTICAL INSTRUMENTS; OPTICAL RESONATORS; SCANNING; SCANNING ELECTRON MICROSCOPY; THICKNESS MEASUREMENT;

EID: 0002314397     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310789     Document Type: Conference Paper
Times cited : (6)

References (10)
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  • 2
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  • 3
    • 0001603544 scopus 로고    scopus 로고
    • Reduction of mask-induced CD errors by optical proximity correction, to be published in Proc
    • J. Randall, A. Tritchkov, P. Jaenen, R. Jonckheere, K. Ronse, "Reduction of mask-induced CD errors by optical proximity correction", to be published in Proc. SPIE, Vol 3334 (1998).
    • (1998) SPIE , vol.3334
    • Randall, J.1    Tritchkov, A.2    Jaenen, P.3    Jonckheere, R.4    Ronse, K.5
  • 5
    • 0031339252 scopus 로고    scopus 로고
    • M. Op de Beeck, K. Ronse, K. Ghandehari, P. Jaenen, H. Botermans, J. Finders, J. Lilygren, D. Baker, G. Vandenberghe, P. De Bisschop, M. Maenhoudt, L. Van den hove, NA/sigma optimisation strategies for an advanced DUV stepper applied to 0.25 μm and sub-0.25 μm critical levels, Proc. SPIE, 3026, p. 320 (1997).
    • M. Op de Beeck, K. Ronse, K. Ghandehari, P. Jaenen, H. Botermans, J. Finders, J. Lilygren, D. Baker, G. Vandenberghe, P. De Bisschop, M. Maenhoudt, L. Van den hove, "NA/sigma optimisation strategies for an advanced DUV stepper applied to 0.25 μm and sub-0.25 μm critical levels", Proc. SPIE, Vol. 3026, p. 320 (1997).
  • 6
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    • 0.18 μm KrF Lithography using OPC based on Empirical Behavior Modeling
    • submitted for EIPB'98 conference, Chicago
    • Alexander Tritchkov, John Stirniman*, Kurt Ronse, and Luc Van den hove, "0.18 μm KrF Lithography using OPC based on Empirical Behavior Modeling", submitted for EIPB'98 conference, Chicago 1998.
    • (1998)
    • Tritchkov, A.1    Stirniman*, J.2
  • 7
    • 58649108809 scopus 로고    scopus 로고
    • K. van Ingen Schenau, J.P. Kuijten, Investigation of key components to intrafield CD variation for sub-0.25 μm lithography, Proc. Interface 97, p. 41 (1997).
    • K. van Ingen Schenau, J.P. Kuijten, "Investigation of key components to intrafield CD variation for sub-0.25 μm lithography", Proc. Interface 97, p. 41 (1997).
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    • The application of alternating phase shift masks to 140nm gate patterning : Line width control improvements and design optimisation
    • to be published in Proc. SPIE
    • Hua-Yu Liu, Linard Karklin, Yao-Ting Wang, and Y.C. Pati, "The application of alternating phase shift masks to 140nm gate patterning : line width control improvements and design optimisation", BACUS symposium 1997, to be published in Proc. SPIE Vol. 3236 (1997).
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  • 10
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    • Rainer Pforr, Alfred Wong, Kurt Ronse, Luc Van den hove, Anthony Yen, Shane Palmer, Gene Fuller and Oberdan Otto, Feature biasing versus feature assisted lithography - a comparison of proximity correction methods for sub-0.5 λ/NA lithography, Proc. SPIE, 2440 , p. 150 (1995).
    • Rainer Pforr, Alfred Wong, Kurt Ronse, Luc Van den hove, Anthony Yen, Shane Palmer, Gene Fuller and Oberdan Otto, "Feature biasing versus feature assisted lithography - a comparison of proximity correction methods for sub-0.5 λ/NA lithography", Proc. SPIE, Vol. 2440 , p. 150 (1995).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.