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Volumn 35, Issue 3, 1996, Pages 1690-1695
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Kinetic study of silicon nitride growth from dichlorosilane and ammonia
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Author keywords
Ammonia; Deposition mechanism; Dichlorosilane; Reaction rate constant; Silicon nitride films; Thickness profile
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Indexed keywords
AMMONIA;
DECOMPOSITION;
DEPOSITION;
DIFFERENTIAL SCANNING CALORIMETRY;
MATHEMATICAL MODELS;
REACTION KINETICS;
SEMICONDUCTING FILMS;
SILANES;
SILICON NITRIDE;
SILICON WAFERS;
THICKNESS MEASUREMENT;
BATCH FURNACE;
DICHLOROSILANE;
REACTION RATE CONSTANT;
SILICON NITRIDE GROWTH;
SURFACE REACTION RATE;
FILM GROWTH;
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EID: 0030103269
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.1690 Document Type: Article |
Times cited : (4)
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References (14)
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