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Volumn 35, Issue 3, 1996, Pages 1690-1695

Kinetic study of silicon nitride growth from dichlorosilane and ammonia

Author keywords

Ammonia; Deposition mechanism; Dichlorosilane; Reaction rate constant; Silicon nitride films; Thickness profile

Indexed keywords

AMMONIA; DECOMPOSITION; DEPOSITION; DIFFERENTIAL SCANNING CALORIMETRY; MATHEMATICAL MODELS; REACTION KINETICS; SEMICONDUCTING FILMS; SILANES; SILICON NITRIDE; SILICON WAFERS; THICKNESS MEASUREMENT;

EID: 0030103269     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1690     Document Type: Article
Times cited : (4)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.