Materials characterization of Si1-x-yGexCy/Si superlattice structures

Thin Solid Films

Volumn 308-309, Issue 1-4, 1997, Pages 358-362

  Laursen, T ^a   Chandrasekhar, D ^a   Smith, David J ^a   Mayer, J W ^a   Croke, E T ^b   Hunter, A T ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

Ion beam analysis; Molecular beam epitaxy; Silicon germanium carbon; Superlattice

Indexed keywords

FILM PREPARATION; ION BEAMS; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; STRAIN MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SILICON GERMANIUM CARBIDE; SUPERLATTICE STRAIN;

SEMICONDUCTING FILMS;

EID: 0031245789     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00578-6     Document Type: Article

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