Conjugation length dependence of the charge transport in oligothiophene single crystals

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 3, 2001, Pages

  Schon J H ^a   Kloc, C ^a   Fichou, D ^b   Batlogg, B ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b CEA SACLAY   (France)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

THIOPHENE DERIVATIVE;

ARTICLE; CRYSTAL; ELECTRON; HIGH TEMPERATURE; LOW TEMPERATURE; SEMICONDUCTOR; SPECTROSCOPY; TEMPERATURE DEPENDENCE;

EID: 0001609099     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.035209     Document Type: Article

References (50)

1. H E. Katz, A. Dodabalapur, and Z. Bao, in Hanbook of Oligo- and Polythiophenes, edited by D. Fichou (Wiley-VCH, Weinheim, 1999).
2. H E. Katz, L. Torsi, and A. Dodabalapur, Chem. Mater.7, 2235 (1997).
3. L. Torsi, A. Dodabalapur, L J. Rothberg, A W P. Fung, and H E. Katz, Science272, 1462 (1996).
4. F. Garnier, G. Horowitz, D. Fichou, and A. Yassar, Synth. Met.81, 163 (1996).
5. K. Waragai, H. Akimichi, S. Hotta, and H. Kano, Phys. Rev. B52, 1786 (1995).
6. J. Paloheimo, P. Kuivalainen, H. Stubb, E. Vuorimaa, and P. Yli-Lahti, Appl. Phys. Lett.56, 1157 (1990).
7. A R. Brown, C P. Jarrett, D M. de Leeuw, and M. Matters, Synth. Met.88, 37 (1997).
8. C D. Dimitrakopoulos, B K. Furman, T. Graham, S. Hegde, and S. Purushothaman, Synth. Met.92, 47 (1998).
9. H. Sirringhaus, N. Tessler, and R H. Friend, Science280, 1741 (1998).
10. A. Dodabalapur, Z. Bao, A. Makhija, J G. Laquindanum, V R. Raju, Y. Feng, H E. Katz, and J. Rogers, Appl. Phys. Lett.73, 142 (1998).
11. S F. Nelson, Y.-Y. Lin, D J. Gundlach, and T N. Jackson, Appl. Phys. Lett.72, 1854 (1998).
12. J H. Schön and B. Batlogg, Appl. Phys. Lett.74, 260 (1999).
13. W A. Schoonveld, J. Wildeman, D. Fichou, P A. Bobbert, B J. van Wees and T M. Klapwijk, Nature (London)404, 977 (2000).
14. J H. Schön, Ch. Kloc, R A. Laudise, and B. Batlogg, Phys. Rev. B58, 12 952 (1998).
15. D. Fichou, A. Gusev, and F. Charra, Adv. Mater.13, 555 (2001).
16. G. Horowitz, R. Hajlaoui, and F. Kouki, Eur. Phys. J.: Appl. Phys.1, 361 (1998).
17. J H. Schön, Ch. Kloc, and B. Batlogg, Synth. Met.115, 75 (2000).
18. J H. Schön, Ch. Kloc, and B. Batlogg, Organ. Electron.1, 57 (2000).
19. Ch. Kloc, P G. Simpkins, T. Siegrist, and R A. Laudise, J. Cryst. Growth182, 416 (1997).
20. T. Siegrist, R M. Fleming, R C. Haddon, R A. Laudise, A J. Lovinger, H E. Katz, P. Bridenbaugh, and D D. Davis, J. Mater. Res.10, 2170 (1995).
21. T. Siegrist, Ch. Kloc, R A. Laudise, H E. Katz, and R C. Haddon, Adv. Mater.10, 379 (1998).
22. L. Antolini, G. Horowitz, F. Kouki, and F. Garnier, Adv. Mater.10, 382 (1998).
23. G. Horowitz, B. Bachet, A. Yassar, P. Lang, F. Demanze, J.-L. Fave, and F. Garnier, Chem. Mater.7, 1337 (1995).
24. D. Fichou, P. Demanze, G. Horowitz, R. Hajlaoui, M. Constant, and F. Garnier, Synth. Met.85, 1309 (1997).
25. J. Vrijmoeth, R. Stok, R. Veldman, W A. Schoonveld, and T M. Klapwijk, J. Appl. Phys.83, 3816 (1998).
26. J H. Schön, Ch. Kloc, and B. Batlogg, Synth. Met.115, 75 (2001).
27. M. Pope and C E. Swenberg, Electronic Processes in Organic Crystals (Clarendon, Oxford, 1982).
28. N. Karl, in Defect Control in Semiconductors, edited by K. Sumino (North-Holland, Elsevier Science Publishers, Amsterdam, 1990), Vol. 2, pp. 1725.
29. R. Fivaz and E. Mooser, Phys. Rev.163, 743 (1967).
30. N. Karl, in Organic Semiconductors, edited by O. Madelung, M. Schulz, and H. Weiss, Landolt-Börnstein, New Series, Vol. 17, Subvol. 17i (Springer-Verlag, Berlin, 1985), pp. 106–218.
31. W. Warta and N. Karl, Phys. Rev. B32, 1172 (1985).
32. J H. Schön, S. Berg, Ch. Kloc, and B. Batlogg, Science287, 1022 (2000).
33. J H. Schön, Ch. Kloc, and B. Batlogg, Science288, 2338 (2000).
34. E A. Silinsh, G A. Shlihta, and A J. Jurgis, Chem. Phys.155, 389 (1991).
35. E A. Silinsh, G A. Shlihta, and A J. Jurgis, Chem. Phys.138, 347 (1989).
36. J. Appel, in Solid State Physics, edited by F. Seitz, D. Turnbull, and H. Ehrenreich (Academic, New York, 1968), Vol. 21.
37. M W. Wu and E M. Conwell, Chem. Phys. Lett.266, 363 (1997).
38. R C. Haddon, T. Siegrist, R M. Fleming, P M. Bridenbaugh, and R A. Laudise, J. Mater. Chem.5, 1719 (1995).
39. J. Cornil, J P. Calbert, D. Beljonne, R. Silbey, and J.-L. Bredas, Adv. Mater.12, 978 (2000).
40. J H. Schön, Ch. Kloc, and B. Batlogg, Phys. Rev. Lett.86, 3843 (2001).
41. C E. Swenberg and M. Pope, Chem. Phys. Lett.287, 535 (1998).
42. S. Berg, G A. Thomas, J H. Schön, A. Markelz, and B. Batlogg, Phys. Rev. B (to be published).
43. G. Horowitz, R. Hajlaoui, D. Fichou, and A. El Kassami, J. Appl. Phys.85, 3202 (1999).
44. G. Brocks, Synth. Met.102, 914 (1999).
45. A. Devos and M. Lannoo, Phys. Rev. B58, 8236 (1998).
46. J H. Schön, and B. Batlogg, Ch. Kloc, MRS Symposia Proceedings No. 598 (Materials Research Society, Pittsburgh, 2000).
47. J H. Schön, Ch. Kloc, and B. Batlogg, Nature (London)406, 702 (2000).
48. M. Lee, J H. Schön, Ch. Kloc, and B. Batlogg, Phys. Rev. Lett.86, 862 (2001).
49. M. Knupfer, J. Fink, E. Zojer, G. Leising, and D. Fichou, Chem. Phys. Lett.318, 585 (2000).
50. M. Knupfer, J. Fink, and D. Fichou, Phys. Rev. B (to be published).