Does the 1.25 eV luminescence of coherently strained InGaAs insertions in GaAs originate from quantum dots?

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 199-204

  Lazzari, J L ^a   Klann, R ^a   Mazuelas, A ^a   Trampert, A ^a   Wassermeier, M ^a   Brandt, O ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; STRAIN;

THREE DIMENSIONAL COHERENT MODE GROWTH; THREE DIMENSIONALLY CONFINED EXCITONS;

HETEROJUNCTIONS;

EID: 0029723481     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)