Analysis of capacitance-voltage characteristics o/Si quantum-well structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 11, 1996, Pages 7979-7986

  Wang, J ^a   Lu, F ^a   Zhang, S ^a   Zhang, B ^a   Gong, D ^a   Sun, H ^a   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038643813     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.7979     Document Type: Article

References (16)

1. H. Kroemer, W-Y. Chien, J. S. Harris, Jr., and D. D. Edwall, Appl. Phys. Lett. 36, 295 (1980).
2. E. F. Schubert and K. Ploog, Jpn. J. Appl. Phys. 25, 966 (1986).
3. S. Sasa, S. Muto, K. Kondo, H. Ishikawa and S. Hiyamizu, Jpn. J. Appl. Phys. 24, L602 (1986).
4. N. Kobayashi, T. Makimoto and Y. Horikoshi, Jpn. J. Appl. Phys. 25, L746 (1986).
5. E. F. Schubert, J. B. Stark, B. Ullrich and J. E. Cunningham, Appl. Phys. Lett. 52, 1508 (1988).
6. E. F. Schubert, R. F. Kropf, J. M. Kuo, H. S. Luftman and P. A. Garbiniski, Appl. Phys. Lett. 57, 497 (1990).
7. J. C. Brighten, I. D. Hawkins, A. R. Peaker, E. H. C. Parker and T. E. Whall, J. Appl. Phys. 74, 1894 (1993).
8. Y. C. Shih and B. G. Streetman, Appl. Phys. Lett. 59, 1344 (1991).
9. N. Yamamoto, K. Yokoyama and M. Yamamoto, Appl. Phys. Lett. 62, 252 (1993).
10. M. Sundaram and A. C. Gossard, J. Appl. Phys. 73, 251 (1993).
11. M. Sundaram, S. J. Allen and A. C. Gossard, J. Appl. Phys. 76, 1003 (1994).
12. M. Missous and E. H. Rhoderick, Solid State Electron. 28, 233 (1985).
13. X. Letartre, D. Stievenard and E. Barbier, J. Appl. Phys. 69, 7912 (1991).
14. K. Tittelbach-Helmrich, Semicond. Sci. Technol. 8, 1372 (1993).
15. F. Lu, D. W. Gong, J. B. Wang, Q. H. Wang, H. H. Sun and X. Wang, Phys. Rev. B 53, 4623 (1996).
16. A. Y. Cho, J. Appl. Phys. 46, 1733 (1975).