Molecular-beam epitaxy of InTlAs

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 536-541

  Lange, M D ^a   Storm, D F ^b   Cole, Teresa ^a  

^a NAVAL AIR WARFARE CENTER   (United States)

^b UNIVERSITY OF THE VIRGIN ISLANDS   (United States)

Author keywords

InAs; InTlAs; Molecular beam epitaxy (MBE); Thallium; TlAs

Indexed keywords

EID: 0000176802     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0011-9     Document Type: Article

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