Assembling strained InAs islands by chemical beam epitaxy

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 609-614

  Miller, M S ^a   Jeppesen, S ^a   Hessman, D ^a   Kowalski, B ^a   Maximov, I ^a   Junno, B ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHEMICAL BEAM EPITAXY; ELECTRONIC STRUCTURE; MORPHOLOGY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; THREE DIMENSIONAL;

MORPHOLOGICAL PHASE TRANSITIONS; QUASI EQUILIBRIUM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0029700657     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00373-8     Document Type: Article

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