SCOPUS 정보 검색 플랫폼

Volumn 67, Issue , 1995, Pages 3387-

Excitonic recombination in GaN grown by molecular beam epitaxy

(10) Smith, M a Chen, G D a Li, J Z a Lin, J Y a Jiang, H X a Salvador, A b Kim, W K b Aktas, O b Botchkarev, A b Morkoc H b

a KANSAS STATE UNIVERSITY (United States)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; ELECTRON TRANSITIONS; ENERGY GAP; EXCITONS; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

EXCITONIC RECOMBINATION; FREE EXCITONIC TRANSITIONS; GALLIUM NITRIDE; TIME RESOLVED PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE;

EID: 0029635808 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.114902 Document Type: Article

Times cited : (80)

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