Synchrotron-radiation-excited epitaxy of Ge with GeH4

Journal of Applied Physics

Volumn 79, Issue 12, 1996, Pages 9396-9398

  Akazawa, Housei ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007282630     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362575     Document Type: Article

References (14)

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