Investigation of a SF6 helicon plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 1, 1998, Pages 78-86

  Chabert, P ^a,b   Boswell, R W ^a   Davis, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b ONERA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032332258     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581015     Document Type: Article

References (26)

1. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (Wiley, New York, 1994).
2. G. Cunge, P. Chabert, and J. P. Booth, Plasma Sources Sci. Technol. (to be published).
3. R. Padiyath, R. L. Wright, M. I. Chaudhry, and S. V. Babu, Appl. Phys. Lett. 58, 11 (1991).
4. G. F. McLane and J. R. Flemish, Appl. Phys. Lett. 68, 24 (1996).
5. C. Charles, R. W. Boswell, and H. Kuwahara, Appl. Phys. Lett. 67, 40,3 (1995).
6. A. J. Perry and R. W. Boswell, Appl. Phys. Lett. 55, 148 (1989).
7. K. M. Eisele, J. Electrochem. Soc. 128, 123 (1981).
8. F. Becker, I. W. Rangelow, and R. Kassing, J. Appl. Phys. 80, 56 (1996).
9. Y. Ohtsu, T. Seki, and H. Fujita, Jpn. J. Appl. Phys., Part 1 35, 4494 (1996).
10. L. St Onge, M. Chaker, and J. Margot, 49th Annual Gaseous Electronics Conference, Argonne, Illinois, October 20-24, 1996 (unpublished).
11. R. Petri, B. Kennedy, D. Henry, N. Sadeghi, and J. P. Booth, J. Vac. Sci. Technol. B 12, 2970 (1994).
12. A. J. Perry, D. Vender, and R. W. Boswell, J. Vac. Sci. Technol. B 9, 310 (1991).
13. R. W. Boswell, Phys. Lett. 33A, 457 (1970).
14. J. W. Coburn and M. Chen, J. Appl. Phys. 51, 3134 (1980).
15. J. Ding, J.-S. Jenq, G.-H. Kim, H. L. Maynard, J. S. Hamers, N. Hershkowitz, and J. W. Taylor, J. Vac. Sci. Technol. B 11, 1283 (1993).
16. A. R. Ellingboe and R. W. Boswell, Phys. Plasmas 3, 2797 (1996).
17. D. Margreiter, G. Walder, H. Deutsch, H. U. Poll, C. Winkler, K. Stephan, and T. D. Mark, Int. J. Mass Spectrom. Ion Processes 100, 143 (1990).
18. L. E. Kline, D. K. Davies, C. L. Chen, and P. J. Chantry, J. Appl. Phys. 50, 6789 (1979).
19. P.-W. Lee, Y.-J. Kim, C. S. Chang, H.-Y. Chang, and J. Moon, Rev. Sci. Instrum. 66, 4591 (1995).
20. G. Bruno, P. Capuzzeto, and G. Gicala, J. Appl. Phys. 69, 7256 (1991).
21. M. Iio, M. Goto, H. Toyoda, and H. Sugai, Contrib. Plasma Phys. 35, 405 (1995).
22. K. R. Ryan and K. J. Brennan (private communication) (July 1989).
23. J. Pelletier, J. Phys. D: Appl. Phys. 51, 5273 (1980).
24. R. Petri, N. Sadeghi, and D. Henry, J. Vac. Sci. Technol. A 13, 2930 (1995).
25. P. Chabert, A. Rousseau, G. Gousset, and P. Leprince, J. Appl. Phys (submitted).
26. Z. Zahbour, K. Blanks, K. Martus, and K. Becker, J. Chem. Phys. 88, 4252 (1988).