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Volumn 3048, Issue , 1997, Pages 255-263

SCALPEL proof-of-concept system: Preliminary lithography results

Author keywords

E beam; Lithography; Mask; Process latitude; Resist

Indexed keywords

ELECTRON BEAMS; LITHOGRAPHY; MASKS;

EID: 0001117766     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.275786     Document Type: Conference Paper
Times cited : (15)

References (8)
  • 6
    • 0029408014 scopus 로고
    • Effects of resist thickness and thin-film interference in I-line and deep ultraviolet optical lithography
    • J. Xiao, J. Garofalo, R. Cirelli, S. Vaidya, "Effects of resist thickness and thin-film interference in I-line and deep ultraviolet optical lithography", J. Vac. Sci. Technol. B, 13, 2897 (1995);
    • (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 2897
    • Xiao, J.1    Garofalo, J.2    Cirelli, R.3    Vaidya, S.4
  • 8
    • 0010320182 scopus 로고    scopus 로고
    • Measurement of the backscatter coefficient using resist response curves for 20-100 keV electron beam lithography on Si
    • G. P. Watson, D. Fu, S. D. Berger, D. Tennant, L. Fetter, A. Novembre, C. Biddick, "Measurement of the backscatter coefficient using resist response curves for 20-100 keV electron beam lithography on Si", J. Vac. Sci. Technol. B, 14,4277 (1996).
    • (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 4277
    • Watson, G.P.1    Fu, D.2    Berger, S.D.3    Tennant, D.4    Fetter, L.5    Novembre, A.6    Biddick, C.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.