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Volumn 88, Issue 11, 2000, Pages 6922-6924

Strain relaxation and defect reduction in InxGa1-xAS/GaAs by lateral oxidation of an underlying AlGaAs layer

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Indexed keywords


EID: 0001084218     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1287766     Document Type: Article
Times cited : (7)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.