Continuous wave operation of GaInNAs laser diode at room temperature

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1996, Pages 310-311

  Kondow, M ^a   Nakatsuka, S ^a   Kitatani, T ^a   Yazawa, Y ^a   Okai, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

CLADDING LAYERS; OPTICAL GUIDE LAYERS; SINGLE QUANTUM WELL ACTIVE LAYERS;

QUANTUM WELL LASERS;

EID: 0030387479     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/leos.1996.565256     Document Type: Conference Paper

References (3)