Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine

Applied Physics Letters

Volumn 69, Issue 21, 1996, Pages 3227-3229

  Nikishin, S A ^a,c   Antipov, V G ^a   Ruvimov, S S ^a   Seryogin, G A ^b   Temkin, H ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Engineering Research Center and Hydraulics Laboratory   (United States)

^c Department of Environmental and Radiological Health Sciences

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009321328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118018     Document Type: Article

References (11)

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