Structural characterization and electron tunneling at n-Si/SiO2/SAM/liquid interface

Journal of Physical Chemistry B

Volumn 103, Issue 25, 1999, Pages 5220-5226

  Gu, Y ^a   Akhremitchev, B ^a   Walker, G C ^a   Waldeck, D H ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001003453     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp9838184     Document Type: Article

References (56)

1. Lewis, N. S. J. Phys. Chem B 1998, 102, 4843.
2. (a) Cheng, J.; Saghi-Szabo, G.; Tossell, A. J.; Miller, C. J. J. Am. Chem. Soc. 1996, 118, 680.
3. (b) Chidsey, C. E. D. Science 1991, 251, 919.
4. (c) Smalley, J. F.; Feldberg, S. W.; Chidsey, C. E. D.; Linford, M. R.; Newton, M. D.; Liu, Y.-P. J. Phys. Chem., 1995, 99, 13141.
5. (d) Finklea, H. O.; Hanshew, D. D. J. Am. Chem. Soc. 1992, 114, 3173.
6. (a) Linford, M. R.; Chidsey, C. E. D. J. Am. Chem. Soc. 1993, 115, 12631.
7. (b) Linford, M. R.; Fenter, R.; Eisenberger, P. M.; Chidsey, C. E. D. J. Am. Chem. Soc. 1995, 117, 3145.
8. (c) Terry, J.; Linford, M. R.; Wigren, C.; Cao, R.; Pianetta, P.; Chidsey, C. E. D. Appl. Phys. Lett. 1997, 71, 1056.
9. (a) Bansal, A.; Li, X., Lauermann, I.; Lewis. N. S.; Yi, S. I.; Weinberg, W. H. J. Am. Chem. Soc. 1996, 118, 7225.
10. (b) Bansal, A.; Lewis, N. S. J. Phys. Chem. B 1998, 102, 1067.
11. (a) Gu, Y.; Lin, Z.; Butera, R. A.; Smentkowski, V. S.; Waldeck, D. H. Langmuir 1995, 11, 1849.
12. (b) Gu, Y.; Kumar, K.; Lin, Z.; Read, I.; Zimmt, M. B.; Waldeck, D. H. J. Photochem. Photobiol. A 1997, 105, 189.
13. Gu, Y.; Waldeck, D. H. J. Phys. Chem. 1996, 100, 9573.
14. (a) Lercel, M. J.; Tiberio, R. C.; Chapman, P. F.; Craighead, H. G.; Sheen, C. W.; Parikh, A. N.; Allara, D. L. J. Vac. Sci. Technol. B 1993, 11, 2823.
15. (b) Komeda, T.; Namba, K.; Nishioka, Y. Appl. Phys. Lett. 1997, 70, 3398.
16. (c) Komeda, T.; Namba, K.; Nishioka, Y. Jpn. J. Appl. Phys. 1998, 37, L204.
17. (a) Boulas, C.; Davidovits, J. V.; Rondelez, F.; Vuillaume, D. Phys. Rev. Lett. 1996, 76, 4797.
18. (b) Vuillaume, D.; Boulas, C.; Collet, J.; Davidovits, J. V.; Rondelez, F. Appl. Phys. Lett. 1996, 69, 1646.
19. (a) Ulman, A. Ultrathin Organic Film; Academic Press: New York, 1991.
20. (b) Ulman, A. Chem. Rev. 1996, 96, 1533.
21. (a) Maoz, R.; Sagiv, J. Langmuir 1987, 3, 1034; (b) 1045.
22. (a) Maoz, R.; Sagiv, J. J. Colloid Interface Sci. 1984, 100, 465.
23. (b) Gun, J.; Sagiv, J. J. Colloid Interface Sci. 1986, 112, 457.
24. Chen, S. H.; Frank, C. F. Langmuir 1989, 5, 978.
25. (a) Schwartz, D. K.; Steinberg, S.; Israelachvili, J.; Zusadzinski, J. A. N. Phys. Rev. Lett. 1992, 69, 3354.
26. (b) Xiao, X.-D.; Liu, G.; Charych, D. H.; Salmeron, M. Langmuir 1995, 11, 1600.
27. (a) Bierbaum, K.; Grunze, M.; Baski, A. A.; Chi, L. F.; Schrepp, W.; Fuchs, H. Langmuir 1995, 11, 2143.
28. (b) Banga, R.; Yarwood, J.; Morgan, A. M.; Evans, B.; Keils, J. Langmuir 1995, 11, 4393.
29. Haran, A.; Waldeck, D. H.; Naaman, R.;. Moons, E.; Cahen, D. Science 1994, 263, 948.
30. Wrighton, M. S.; Austin, R. G.; Bocarsly, A. B.; Bolts, J. M.; Haas O.; Legg, K. D.; Nadjo, L.; Palazzotto, M. C. J. Am. Chem. Soc. 1978, 100, 1602.
31. Gu, Y.; Waldeck, D. H. J. Phys. Chem. B 1998, 102, 9015.
32. Polymeropoulous, E. E.; Sagiv, J. Chem. Phys. 1978, 69, 1836.
33. Sze, S. M. Physics of Semiconductor Devices, 2nd ed.; Wiley: New York, 1981.
34. Levinshtein, M., Rumyantsev, S., Shur, M., Eds. Handbook Series on Semiconductor Parameters; World Scientific: New Jersey, 1996; Vol. 1.
35. Wasserman, S. R.; Tao, Y.; Whitesides, G. M. Langmuir 1989, 5, 1074.
36. Sagiv, J. Isr. J. Chem. 1979, 18, 346.
37. Shumaker, M. L.; Dollard, W. J.; Zeglinski, D. M.; Waldeck, D. H. Proc. IS&T 1991, 231.
38. Wagner, C. D.; Riggs, W. M.; Davis, L. E.; Moulder, J. F.; Muilenberg, G. E. Handbook of X-ray Photoelectron Spectroscopy; Perkin-Elmer: Eden Prairie, MN, 1979.
39. Hochella, M. F., Jr.; Carim, A. H. Surf. Sci. Lett. 1988, 197, L260.
40. (a) Pomykal, K. E.; Fajardo, A. M.; Lewis, N. S. J. Phys. Chem. 1995, 99, 8302.
41. (b) Kuraar, A.; Lewis, N. S. J. Phys. Chem. 1991, 95, 7021.
42. Morrison, S. R. Electrochemistry at Semiconductor and Oxidized Metal Electrodes; Plenum: New York, 1980.
43. 2 of 12.2. The data in Figure 6 show an increase ranging from 11.6 to 13.6, in reasonable agreement with this simple analysis.
44. (a) Wilson, R. H. J. Appl. Phys. 1977, 48, 4292.
45. (b) Wilson, R. H. CRC Crit. Rev. Solid State Mater. Sci. 1980, 10, 1.
46. (a) Haneman, D.; McCann, J. F. Phys. Rev. B 1982, 25, 1241.
47. (b) McCann, J. F.; Haneman, D. J. Electrochem. Soc. 1982, 129, 1134 and references therein.
48. Reiss, H. J. Electrochem. Soc. 1978, 125, 937.
49. Gärtner, W. W. Phys. Rev. 1959, 116, 84.
50. Reichman, J. Appl. Phys. Lett. 1980, 36, 574.
51. 2/(V s) and the hole lifetime was 78 μs. The other parameters may be calculated from those given here or are reported in the text.
52. Lewis, N. S. J. Electrochem. Soc. 1984, 131, 2496.
53. Pierret, R. F. Advanced Semiconductor Fundamentals; Addison-Wesley: Reading, MA, 1987.
54. (a) Kauffman, J. F.; Liu, C. S.; Karl, M. W. J. Phys. Chem. B 1998, 102, 2739.
55. (b) Rosenwaks, Y.; Thacker, B. R.; Nozik, A. J.; Ellingson, R. J.; Burr, K. C.; Tang, C. L. J. Phys. Chem. 1994, 98, 2739.
56. Adamson, A. W. Physical Chemistry of Surfaces, 5th ed.; Wiley: New York, 1990.