Surface recombination kinetics at the GaAs/electrolyte interface via photoluminescence efficiency measurements

Journal of Physical Chemistry B

Volumn 102, Issue 35, 1998, Pages 6766-6773

  Kauffman, John F ^a   Liu, Chang Sheng ^a   Karl, Maurice W ^a  

^a UNIVERSITY OF MISSOURI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTES; MATHEMATICAL MODELS; OHMIC CONTACTS; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SODIUM COMPOUNDS; SURFACES;

PHOTOLUMINESCENCE EFFICIENCY MEASUREMENT; SURFACE RECOMBINATION KINETICS;

PHOTOLUMINESCENCE;

EID: 0032136209     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp980697z     Document Type: Article

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