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Volumn 100, Issue 23, 1996, Pages 9573-9576

Studies of electron tunneling at semiconductor electrodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; MONOLAYERS; OXIDATION; PHOTOCHEMICAL REACTIONS; PHOTOELECTRICITY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR MATERIALS;

EID: 0030572263     PISSN: 00223654     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp953754m     Document Type: Article
Times cited : (29)

References (38)
  • 26
    • 85088810230 scopus 로고    scopus 로고
    • note
    • -3.
  • 28
    • 85088809608 scopus 로고    scopus 로고
    • note
    • 4-.
  • 32
    • 33748491923 scopus 로고    scopus 로고
    • note
    • (a) The fluorescence decay is determined using the time-correlated single-photon-counting method. The laser repetion rate was 125 kHz. The excitation wavelength was 595 nm and the incident power is less than 0.1 mW.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.