Microscopic structure of strained InGaAs/GaAs heterostructures

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 653-658

  Proietti, M G ^a   Turchini, S ^b   Garcia J ^a   Lamble, G ^c   Martelli, F ^d   Prosperi, T ^b  

^a CSIC   (Spain)

^b CNR   (Italy)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

^d FONDAZIONE UGO BORDONI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; MICROSCOPIC EXAMINATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; STRAIN; SUBSTRATES;

BOND BENDING; BOND STRETCHING; ELASTIC THEORY; EXTENDED X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; GLANCING ANGLE TECHNIQUE; GROWTH TEMPERATURE; MICROSCOPIC STRUCTURE;

SPECTROSCOPY;

EID: 0029703586     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00381-9     Document Type: Article

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