Interface strain in InGaAs-InP superlattices

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 739-744

  Clawson, A R ^a   Hanson, C M ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Naval Command   (United States)

Author keywords

As P replacement; InGaAs InP superlattice; Interface strain; Metalorganic vapor phase epitaxy (MOVPE); X ray diffraction (XRD)

Indexed keywords

EID: 0040397213     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666533     Document Type: Article

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