Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 869-879

  Asano, Masafumi ^a   Maruyama, Yumiko ^a   Koike, Toru ^a   Chiba, Kenji ^a   Shiobara, Eishi ^a   Ikeda, Takahiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Depth of focus; Development process; KrF excimer laser lithography; Optical proximity effect; Resist thickness

Indexed keywords

EXCIMER LASERS; GAS LASERS; KRYPTON; LIGHT; MICROMETERS; THICKNESS MEASUREMENT;

DEPTH OF FOCUS; DEVELOPMENT PROCESS; KRF EXCIMER LASER LITHOGRAPHY; OPTICAL PROXIMITY EFFECT; RESIST THICKNESS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0000765437     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312447     Document Type: Conference Paper

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