Sub-quarter micron lithography with the dual-trench type alternating PSM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2793, Issue , 1996, Pages 165-173

  Kanai, H ^a   Kawano, K ^a   Tanaka, S ^a   Shiobara, E ^a   Aoki, M ^a   Yoneda, I ^a   Ito, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Alternating phase shifting mask; Dual trench structure; Effective transmission and phase; Topographical effect

Indexed keywords

ERRORS; OPTICAL RESOLVING POWER; OPTICAL VARIABLES MEASUREMENT; PHOTOMASKS; TOPOGRAPHY; TRANSMISSIONS; X RAYS;

ALTERNATING PHASE SHIFTING MASK; ALTERNATING-PSM; EFFECTIVE TRANSMISSION; EXPOSURE CHARACTERISTICS; PEAK INTENSITY; PHASE DIFFERENCE; TOPOGRAPHICAL EFFECTS; TRENCH STRUCTURES;

MASKS;

EID: 0001521641     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.245213     Document Type: Conference Paper

References (6)

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6. S.Tanaka, H. Nakamura, K. Kawano, and S. Inoue, "Practical Topography Design for Alternating Phase-Shifting Mask, " Proc. SPIE, 1996 (to be published).