SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 556-561

Surface geometry of MBE-grown GaAs(001) surface phases

(7) Xue, Qikun a Hashizume, T a,d Sakata, T a,e Hasegawa, Y a Ichimiya, A b Ohno, T c Sakurai, T a

a TOHOKU UNIVERSITY (Japan)

b NAGOYA UNIVERSITY (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

d HITACHI LTD (Japan)

e Osaka Prefecture University (Japan)

Author keywords

Gallium arsenide; Molecular beam epitaxy; Surface geometry

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; GEOMETRY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

FLUX RATIO; MIGRATION ENHANCED EPITAXY; SURFACE GEOMETRY; SURFACE PHASES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030218529 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(96)08719-6 Document Type: Article

Times cited : (11)

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