Influence of Ga vs As prelayers on GaAs/Ge growth morphology

Journal of Electronic Materials

Volumn 25, Issue 6, 1996, Pages 1009-1013

  Xu, Q ^a   Hsu, J W P ^a   Fitzgerald, E A ^b   Kuo, J M ^c   Xie, Y H ^c   Silverman, P J ^c  

^a University of Virginia   (United States)

^b Massachusetts Institute of Technology   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

GaAs Ge; Molecular beam epitaxy (MBE); Prelayers; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); GERMANIUM; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SUBSTRATES; THIN FILMS;

ANTI PHASE BOUNDARIES; PRELAYERS; SCANNING FORCE MICROSCOPY; SURFACE ROUGHNESS; THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030156283     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666737     Document Type: Article

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