Molecular beam epitaxy growth of indium-rich In xGa1-xAs/InyAl1-yAs/InP structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer

Journal of Crystal Growth

Volumn 169, Issue 3, 1996, Pages 435-442

  Hong, Sang Ki ^a   Lee, Hae Gwon ^a   Lee, Jae Jin ^a   Kim, Sang Gi ^a   Pyun, Kwang Eui ^a   Park, Hyung Moo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HIGH CHANNEL CONDUCTIVITY; LINEARLY GRADED BUFFER LAYER; TWO DIMENSIONAL ELECTRON GAS CONCENTRATIONS;

HETEROJUNCTIONS;

EID: 0030394687     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00412-5     Document Type: Article

References (17)

1. L.D. Nguyen, A.S. Brown, M.A. Thomson, L.M. Jelloian, L.E. Larson and M. Matloubian, IEEE Electron Dev. Lett. 13 (1991) 143.
2. K.B. Chough, T.Y. Chang, M.D. Feuer and B. Lalevic, Electron. Lett. 28 (1992) 329.
3. S.Z. Chang, T.C. Chang and S.C. Lee, J. Appl. Phys. 73 (1993) 4916.
4. J. Dickmann, K. Riepe, H. Daembkes and H. Künzel, Int. Conf. on Indium Phosphide and Related Materials (1994) p. 461.
5. A.S. Brown, A.E. Schmitz, L.D. Lguyen, J.A. Henige and L.E. Larson, Int. Conf. on Indium Phosphide and Related Materials (1994) p. 263.
6. C.M. Serrano and C.-A. Chang, Appl. Phys. Lett. 39 (1981) 808.
7. W.-P. Hong, G.I. Ng, P.K. Bhattacharya, D. Pavlidis and S. Willing, J. Appl. Phys. 64 (1988) 1945.
8. D.C. Streit, T.R. Block, M. Wojtowicz, D. Pascua, R. Lai, G.I. Ng, P.-H. Lin and K.L. Tan, J. Vac. Sci. Technol. B 13 (1995) 774.
9. A. Fischer-Colbrie, R.D. Jacowitz and D.G. Ast, J. Crystal Growth 127 (1993) 560.
10. K. Inoue, J.C. Harmand and T. Matsuno, J. Crystal Growth 111 (1991) 313.
11. M.A. Garcia Perez, T. Benyattou, A. Tabata and G. Guillot, Int. Conf. on Indium Phosphide and Related Materials (1994) p. 571.
12. J.L. Lee, H. Kim, J.K. Mun, O. Kwon, J.J. Lee, I.D. Hwang and H.M. Park, ETRI J. 16 (1995) 1.
13. J.C.P. Chang, T.P. Chin, C.W. Tu and K.L. Kavanagh, Appl. Phys. Lett. 63 (1993) 500.
14. V. Drouot, M. Gendry, G. Hollinger, C. Santinelli, X. Letartre and P. Viktorovitch, Int. Conf. on Indium Phosphide and Related Materials (1994) p. 451.
15. K.H. Goetz, D. Bimberg, H. Jurgensen, J. Selders, A.V. Solomonov, G.F. Glinskii and M. Razhegi, J. Appl. Phys. 54 (1983) 4543.
16. B. Wakefield, H.A.G. Halliwell, T. Kerr, D.A. Andrews, G.J. Davies and D.R. Wood, J. Appl. Phys. Lett. 44 (1984) 341.
17. Y.G. Chai and R. Chow, J. Appl. Phys. 53 (1982) 1229.