Hall effect and magnetic properties of III-V based (Ga1-xMn x)As/AlAs magnetic semiconductor superlattices

Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 6551-6553

  Hayashi, T ^a   Tanaka, M ^a,c   Seto, K ^a   Nishinaga, T ^a   Shimada, H ^a   Ando, K ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000347613     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367577     Document Type: Article

References (13)

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