On the theory of electron transfer reactions at semiconductor electrode/liquid interfaces

Journal of Chemical Physics

Volumn 112, Issue 7, 2000, Pages 3358-3369

  Gao, Yi Qin ^a   Georgievskii, Yuri ^a   Marcus, R A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000262396     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.480918     Document Type: Article

References (62)

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62. There is some arbitrariness of this definition of the surface density of electrons and the averaged coupling matrix element because the applied potential on different atom layers of the semiconductor are different. But because the coupling between the semiconductor atoms and the redox species decays fast with their distance (with a decay length in the order of 1 Å), and the applied potential varies slowly (with the band bending in the order of 100 nm), it is a good approximation to assume that the density of electrons is the same in the semiconductor surface region of present interest.