The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 185-189

  Bensaoula, A ^a   Taferner, W T ^a   Kim, E ^a   Bousetta, A ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; IMPURITIES; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE STRUCTURE;

LATTICE MISMATCH; NITRIDATION; TIME OF FLIGHT LOW ENERGY ION SCATTERING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030190556     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00032-2     Document Type: Article

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