Scattering of electrons at threading dislocations in GaN and consequences for current transport in vertical devices

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1997, Pages 219-226

  Weimann, Nils G ^a   Eastman, Lester F ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ELECTROSTATICS; MICROWAVE DEVICES; NITRIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSISTORS;

CHARGE TRAPPING; COULOMB SCATTERING; SEMICONDUCTING GALLIUM NITRIDE; THREADING DISLOCATIONS; VERTICAL MICROWAVE TRANSISTOR STRUCTURES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031338068     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cornel.1997.649361     Document Type: Conference Paper

References (10)