A better insight into the performance of silicon BJT's featuring highly nonuniform collector doping profiles

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 1044-1051

  Palestri, Pierpaolo ^a   Fiegna, Claudio ^b   Selmi, Luca ^a   Peter, Michael S ^c,d   Hurkx, G A M ^c   Slotboom, Jan W ^c   Sangiorgi, Enrico ^a  

^a UNIVERSITY OF UDINE   (Italy)

^b UNIVERSITY OF FERRARA   (Italy)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d Texas Instruments Deutschland GmbH   (Germany)

Author keywords

Bipolar transistors; Doping; Impact ionization; Silicon; Simulation

Indexed keywords

EID: 0000017629     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841239     Document Type: Article

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