18 ps ECL-gate delay in laterally scaled 30 GHz bipolar transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 825-828

  Pruijmboom, A ^a   Timmering, C E ^a   Hageraats, J J E M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

LATERALLY SCALED BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0028755082     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)