Reevaluation of the ftBVceo limit on si bipolar transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1854-1855

  Ng, Kwok K ^a   Frei, Michel R ^a   King, Clifford A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Bipolar breakdown; Cutoff frequency; Ft

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN; FREQUENCIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

BIPOLAR BREAKDOWN; CUTOFF FREQUENCY; JOHNSON LIMIT;

BIPOLAR TRANSISTORS;

EID: 0032138126     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704393     Document Type: Article

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