The application of secondary effects in high aspect ratio dry etching for the fabrication of MEMS

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 641-650

  Volland, B E ^a   Heerlein, H ^a   Kostic, I ^b   Rangelow, I W ^a  

^a UNIVERSITY OF KASSEL   (Germany)

^b INSTITUTE OF CHEMISTRY   (Slovakia)

Author keywords

Aspect ratio dependent etching; High aspect ratio dry etching; Secondary effects

Indexed keywords

ASPECT RATIO; DRY ETCHING; ELECTRIC FIELD EFFECTS; FABRICATION; PLASMA ETCHING;

ASPECT RATIO DEPENDENT ETCHING (ARDE);

MICROELECTROMECHANICAL DEVICES;

EID: 0035450041     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00496-8     Document Type: Article

References (10)