Edge-emitting photoluminescence/electroluminescence polarization studies of InGaN/GaN structures grown by MOCVD on (0001) sapphire

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 524-527

  Florescu, D I ^a   Passman, E P ^a   Lu, D ^a   Lee, D S ^a   Parekh, A ^a   Ramer, J C ^a   Ting, S M ^a   Merai, V ^a   Albert, B ^a   Stall, R A ^a  

^a EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; III-V SEMICONDUCTORS; LIGHT; NITRIDES; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM OPTICS; SAPPHIRE; SEMICONDUCTOR QUANTUM DOTS;

COMMERCIAL REACTOR; EDGE GEOMETRY; ELECTRONIC DEVICE; GREEN SAMPLES; POLARIZATION STUDY; REPRESENTATIVE SAMPLE; STATE OF POLARIZATION; THEORETICAL EVALUATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0347057341     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390104     Document Type: Conference Paper

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