An in-plane GaAs single-electron memory cell operating at 77 K

Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 2073-2075

  Yoo, K H ^a   Park, J W ^a,b   Jinhee, Kim ^b   Park, K S ^b   Oh, S C ^b   Lee, J O ^b,c   Kim, J J ^c   Choi, J B ^b   Lee, J J ^d  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chungbuk National University   (South Korea)

^c Chonbuk National University   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROMETERS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS; THRESHOLD VOLTAGE;

SINGLE-ELECTRON MEMORY CELLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032621371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123761     Document Type: Article

References (6)

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