Study of photoelectron spectroscopy from extremely uniform Si nanoislands on Si(111) 7×7 substrate

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5013-5016

  Negishi, R ^a   Suzuki, M ^a   Shigeta, Y ^a  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIMERS; ELECTRONIC PROPERTIES; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILICON WAFERS; STACKING FAULTS; SUBSTRATES;

ADATOMS; HOMOEPITAXIAL GROWTH; NANOISLANDS; SCANNING TUNNELLING SPECTROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 9744273177     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1801156     Document Type: Article

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