Formation of uniform nanoscale Ge islands on Si(1 1 1)-7 × 7 substrate

Applied Surface Science

Volumn 175, Issue 176, 2001, Pages 77-82

  Masuda, Katsuyuki ^a   Shigeta, Yukichi ^a  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

Author keywords

Nucleation; Scanning tunneling microscopy; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; DEPOSITION; NANOSTRUCTURED MATERIALS; NUCLEATION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PHENOMENA; SURFACE TREATMENT; THERMAL EFFECTS;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GERMANIUM;

EID: 0035873664     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00063-0     Document Type: Article

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