Comparison of crystal structure and electrical properties of tetragonal and rhombohedral Pb(Zr,Ti)O 3 films prepared at low temperature by pulsed-metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5448-5452

  Funakubo, Hiroshi ^a   Tokita, Kouji ^a   Oikawa, Takahiro ^a   Aratani, Masanori ^a   Saito, Keisuke ^b  

^a Tokyo Institute of Technology G1 405 ^*  (Japan)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; FILM COMPOSITION; FILM ORIENTATIONS; LOW TEMPERATURES; LOW-LEAKAGE CURRENT; PB(ZR , TI)O; PZT; PZT FILM; TETRAGONAL PZT FILMS;

ELECTRIC PROPERTIES; LEAD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS; VAPORS; ZIRCONIUM;

FILM PREPARATION;

EID: 1342275791     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510169     Document Type: Article

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