SCOPUS 정보 검색 플랫폼

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 25, Issue 2-3 SPEC.ISS., 2004, Pages 189-197

Novel zero-resistance states induced by photoexcitation in the high mobility GaAs/AlGaAs two-dimensional electron system

(1) Mani, R G a,b

a HARVARD UNIVERSITY (United States)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

2DEG; 2DES; Microwave; Quantum Hall; Zero resistance

Indexed keywords

CARRIER MOBILITY; ELECTRIC CHARGE; ELECTRIC RESISTANCE; FREQUENCIES; MAGNETIC FIELDS; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ELECTRONIC STATES; PHOTO-EXCITATION; QUANTUM HALL; ZERO RESISTANCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 9644274312 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2004.06.016 Document Type: Conference Paper

Times cited : (52)

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