Dual ordinary, integral quantum, and fractional quantum Hall effects in partially gated doubly connected GaAAs heterostructure devices

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 23, 1997, Pages 15838-15841

  Mani, R ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008849122     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.15838     Document Type: Article

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