Radiation-induced zero-resistance state at low magnetic fields and near half-filling of the lowest Landau level

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 20, 2004, Pages

  Park, K ^a  

^a Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRIC RESISTANCE; ELECTRON TRANSPORT; MAGNETIC FIELD; MICROWAVE RADIATION; PHOTON;

EID: 30944443017     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.201301     Document Type: Article

References (20)

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9. c.
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16. xx at v=1/2 is much larger than at B=0 for the same sample (Refs. 14 and 15). However, this scattering effect will just renormalizes the density of states so that the amplitude of oscillation [λ in Eq. (9) in the text] in the density of states may be reduced somewhat, while leaving the main physical effect of radiation-induced magnetoresistance oscillation intact. As a corollary, a higher mobility is necessary for radiation-induced magnetoresistance oscillation near v=ν1/2, if other parameters such as temperature are the same as those of electron system.
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20. It should be emphasized that the CF mass does not have any dependence on the band mass of electron because the physics of lowest Landau level has nothing to do with the band mass. In the text, the CF mass is compared with the electron band mass because the electron band mass is a convenient reference point.