Atomic structure and energy of junctions between inversion domain boundaries and stacking faults in wurtzite GaN

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2464-2469

  Kioseoglou, J ^a,b   Bere A ^b   Dimitrakopulos, G P ^a   Serra, A ^b   Nouet, G ^c   Komninou, Ph ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^c LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CONFIGURATION; BASAL STACKING FAULTS; INVERSION DOMAIN BOUNDARIES; LINE DEFECTS; PRISMATIC PLANES; SIMULATED IMAGES; STILLINGER-WEBER POTENTIALS; STRUCTURAL TRANSFORMATION;

GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; ZINC SULFIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 9644269509     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303558     Document Type: Conference Paper

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