Microstructure of GaN films grown by RF-plasma assisted molecular beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Komninou, Philomela ^a   Kehagias, Thomas ^a   Kioseoglou, Joseph ^a   Sarigiannidou, Eirini ^a   Karakostas, Theodoros ^a   Nouet, Gerard ^a   Ruterana, Pierre ^a   Amimer, Khalid ^a   Mikroulis, Spyros ^a   Georgakilas, Alexandros ^a  

^a LABORATOIRE CRISMAT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DEPOSITION; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); METALLOGRAPHIC MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SAPPHIRE; STACKING FAULTS; SURFACE ROUGHNESS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

LOW TEMPERATURE NITRIDATION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

GALLIUM ALLOYS;

EID: 0035557620     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)