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Chemical Physics Letters

Volumn 400, Issue 1-3, 2004, Pages 235-238

C 60 field effect transistor with electrodes modified by La@C 82

(6) Hiroshiba, Nobuya a Tanigaki, Katsumi a,b Kumashiro, Ryotaro a Ohashi, Hirotaka a Wakahara, Takatsugu c Akasaka, Takeshi c

a TOHOKU UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FULLERENE DERIVATIVE; GOLD; ORGANIC COMPOUND;

AIR; ARTICLE; DEVICE; ELECTRIC POTENTIAL; ELECTRODE; FILM; MAXIMUM ALLOWABLE CONCENTRATION; REDUCTION; SEMICONDUCTOR;

EID: 9644252869 PISSN: 00092614 EISSN: None Source Type: Journal
DOI: 10.1016/j.cplett.2004.10.070 Document Type: Article

Times cited : (54)

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