Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantation

Solid-State Electronics

Volumn 49, Issue 1, 2005, Pages 131-135

  Kim, Seong Dong ^a   Park, Cheol Min ^b   Woo, Jason C S ^c  

^a IBM   (United States)

^b INTEL CORPORATION   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Laser annealing; Pre amorphization implantation; Transient enhanced diffusion; Ultra shallow junction

Indexed keywords

AMORPHIZATION; ANNEALING; CMOS INTEGRATED CIRCUITS; DIFFUSION; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICON; THERMOANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

LASER ANNEALING; PRE-AMORPHIZATION IMPLANTATION; THERMAL ANNEALING; TRANSIENT ENHANCED DIFFUSION; ULTRA-SHALLOW JUNCTION;

LASER CHEMISTRY;

EID: 9544248669     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.07.008     Document Type: Article

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