Evolution of residual stress in plasma-enhanced chemical-vapor-deposited silicon dioxide film exposed to room air

Applied Physics Letters

Volumn 75, Issue 24, 1999, Pages 3811-3813

  Park, Youngsoo ^a   Lee, June Key ^a   Jung, Ilsub ^a   Heo, Soo Bong ^a   Lee, Jai Young ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000521772     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125464     Document Type: Article

References (15)

1. E. P. van de Van, R. S. Martin, and J. M. Berman, in Proceedings of the Fourth IEEK VLSI Multilevel Interconnect Conference (IEEE, New York, 1987), p, 434.
2. D. W. Hess, J. Vac. Sci. Technol. A 2, 244 (1984).
3. A. C. Adams, Solid State Technol. 26, 135 (1983).
4. T. A. Temofonte and J. R. Szedon, Proceedings of the 9th Reliability Physics Symposium, Las Vegas, NV (1971), p. 107.
5. M. S. Haque, H. A. Naseem, and W. D. Brown, J. Appl. Phys. 82, 2922 (1997).
6. H. Leplan, J. Y. Robic, and Y. Pauleau, J. Appl. Phys. 79, 6926 (1996).
7. H. Leplan, J. Y. Robic, and Y. Pauleau, J. Appl. Phys. 78, 962 (1995).
8. H. Sankur and W. Gunning, J. Appl. Phys. 66, 807 (1989).
9. T. H. Tom Wu and R. S. Rosler, Solid State Technol., 65 (1992).
10. H. Takahashi, A. Nishiguchi, H. Nagata, H. Kataoka, and M. Fujishima, J. Appl. Phys. 79, 2787 (1996).
11. H. Takahashi, H. Nagata, H. Kataoka, and H. Takai, J. Appl. Phys. 75, 2667 (1994).
12. J. A. Theil. D. V. Tsu, M. W. Watkins, S. S. Kim, and G. Lucovsky, J. Vac. Sci. Technol. A 8, 1374 (1990).
13. H. G. Tompkins and P. W. Deal, J. Vac. Sci. Technol. B 11, 727 (1993).
14. N. Hirashita, S. Tokitoh, and H. Uchida, Jpn. J. Appl. Phys., Part 1 32, 1787 (1993).
15. S. C. Deshmukh and E. S. Aydil, J. Vac. Sci. Technol. A 13, 2355 (1995).