Interface state energy distribution in (1 0 0)Si/HfO2

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 185-189

  Fedorenko, Y G ^a   Truong, L ^a   Afanas'ev, V V ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Electrical biasing; Insulating hafnia; Interface states

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTANCE; ELECTRIC DISCHARGES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR DIODES;

CONDUCTANCE SPECTROSCOPY; ELECTRICAL BIASING; INSULATING HAFNIA; INTERFACE STATES;

SEMICONDUCTING SILICON;

EID: 9544225084     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.001     Document Type: Conference Paper

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