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Volumn 146, Issue 3, 2004, Pages 243-250

FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes

Author keywords

Atomic force microscopy; FET device; Quinquethiophenes; X ray thin film structure

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CHARGE CARRIERS; DEPOSITION; DERIVATIVES; FIELD EFFECT TRANSISTORS; OPTIMIZATION; PHOTOLUMINESCENCE; TEMPERATURE DISTRIBUTION; THIN FILMS; X RAY DIFFRACTION;

EID: 9344257924     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2004.08.031     Document Type: Conference Paper
Times cited : (30)

References (25)
  • 24
    • 0005559175 scopus 로고    scopus 로고
    • Physics of organic field-effect transistors
    • G. Hadzi-ioannou, P.F. van Hutten (Eds.)
    • G. Horowitz, Physics of organic field-effect transistors, in: G. Hadzi-ioannou, P.F. van Hutten (Eds.), Semiconducting Polymers, Wiley, 2000, p. 463.
    • (2000) Semiconducting Polymers, Wiley , pp. 463
    • Horowitz, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.