Organic thin-film transistors based on tolyl-substituted oligothiophenes

Advanced Functional Materials

Volumn 14, Issue 6, 2004, Pages 605-609

  Mohapatra, Siddharth ^a   Holmes, Brian T ^a   Newman, Christopher R ^a   Prendergast, Cathal F ^a   Frisbie, C Daniel ^a   Ward, Michael D ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; FILM GROWTH; HOLE MOBILITY; MONOLAYERS; OLIGOMERS; SUBSTITUTION REACTIONS; TRANSPORT PROPERTIES; X RAY POWDER DIFFRACTION;

CRYSTALLINITY; OLIGOTHIOPHENES; POWDER X-RAY DIFFRACTION (PXRD); TRAP DENSITIES;

THIN FILM TRANSISTORS;

EID: 3142549085     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/adfm.200400034     Document Type: Article

References (30)

1. Handbook of Organic Conductive Molecules and Polymers, Vol.1-4 (Ed: H. S. Nalwa), John Wiley & Sons, Chichester, UK 1997.
2. A. Facchetti, M. H. Yoon, C. L. Stern, H. E. Katz, T. J. Marks, Angew. Chem. Int. Ed. 2003, 42, 3900.
3. Y. Wei, Y. Yang, J. Yen, Chem. Mater. 1996, 8, 2659.
4. T. M. Pappenfus, R. J. Chesterfield, C. D. Frisbie, K. R. Mann, J. Casado, J. D. Raff, L. L. Miller, J. Am. Chem. Soc. 2002, 124, 4184.
5. M. M. Bader, R. Custelcean, M. D. Ward, Chem. Mater. 2003, 15, 616.
6. F. Gamier, A. Yassar, R. Hajlaoui, G. Horowitz, F. Deloffre, B. Servet, S. Ries, P. Alnot, J. Am. Chem. Soc. 1993, 115, 8716
7. M. Mushrush, A. Facchetti, M. Lefenfeld, H. E. Katz, T. J. Marks, J. Am. Chem. Soc. 2003, 125, 31.
8. T. M. Barclay, A. W. Cordes, C. D. Mackinnon, R. T. Oakley, R. W. Reed, Chem. Mater. 1997, 9, 981.
9. G. Horowitz, Adv. Mater. 1998, 10, 365.
10. X. M. Hong, H. E. Katz, A. J. Lovinger, B.-C. Wang, K. Raghavachari, Chem. Mater. 2001, 13, 4686.
11. 2). See: K. Meerholz, J. Heinze, Electrochim. Acta 1996, 41, 1839.
12. F. Gamier, A. Yassar, R. Hajlaoui, G. Horowitz, F. Deloffre, B. Servet, S. Ries, P. Alnot, J. Am. Chem. Soc. 1993, 115, 8716.
13. 1/n, a-44.708 Å, b = 7.851 Å, c = 6.029 Å, β=90.76°).
14. 1/a, a = 9.140 Å, b = 5.684 Å, c = 20.672 Å, β= 97.78°].
15. B. Servet, G. Horowitz, S. Ries, O. Lagorsse, P. Alnot, A. Yassar, F. Deloffre, P. Srivastava, R. Hajlaoui, P. Lang, F. Garnier, Chem. Mater. 1994, 6, 1809.
16. a) C. C. Mattheus, A. B. Dros, J. Baas, A. Meetsma, J. L. de Boer, T. T. Palstra, Acta Crystallogr., C: Cryst. Struct. Commun. 2001, 57, 939.
17. b) D. J. Gundlach, T. N. Jackson, D. G. Schlom, S. F. Nelson, Appl. Phys. Lett. 1999, 74, 3302.
18. c) E. Venuti, R. G. Della Valle, A. Brillante, M. Masino, A. Girlando, J. Am. Chem. Soc. 2002, 124, 2128.
19. d) I. P. M. Bouchoms, W. A. Schoonveld, J. Vrijmoeth, T. M. Klapwijk, Synth. Met. 1999, 5, 3399.
20. The tilt angle of the long axis of the molecule with respect to the normal to the layer plane is 23.5° in 6T (CSD Refcode: ZAQZUM) and 33° in its high-temperature form (CSD Refcode: ZAQZUM01). See: L. Antolini, G. Horowitz, F. Kouki, F. Garnier, Adv. Mater. 1998, 10, 382.
21. S. Hotta, Y. Ichino, Y. Yoshida, M. Yoshida, J. Phys. Chem. B 2000, 104, 10316
22. M. Mushrush, A. Facchetti, M. Lefenfeld, H. E. Katz, T. J. Marks, J. Am. Chem. Soc. 2003, 125, 31.
23. M. Mitsuya, Langmuir 1991, 7, 814.
24. C. S. Chiang, C. Y. Chen, J. Kanicki, Appl. Phys. Lett. 1998, 72, 2874.
25. H. Sirringhaus, R. H. Friend, X. C. Li, S. C. Moratti, A. B. Holmes, N. Feeder, Appl. Phys. Lett. 1997, 71, 3871.
26. A. R. Volkel, R. A. Street, D. Knipp, Phys. Rev. B 2002, 66, 195 336-1.
27. G. Horowitz, M. E. Hajlaoui, Adv. Mater. 2000, 12, 1046.
28. P. G. Le Comber, W. E. Spear, Phys. Rev. Lett. 1970, 25, 509
29. a) C. van Pham, R. S. Macomber, H. B. Mark, Jr., H. Zimmer, J. Org. Chem. 1984, 49, 5250.
30. b) T. M. Pappenfus, K. R. Mann, Inorg. Chem. 2001, 40, 6301.