Carrier capture cross-section of nonradiative recombination centres introduced by proton implantation in GaAs

Semiconductor Science and Technology

Volumn 19, Issue 11, 2004, Pages 1325-1328

  Guo, X G ^a,b   Lu, W ^a   Chen, X S ^a   Cao, J C ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; INTEGRATED CIRCUITS; ION IMPLANTATION; MONTE CARLO METHODS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICES; SPECTROSCOPY;

CARRIER TRAPS; NONRADIATION; PHONON EMISSION; ROOM TEMPERATURE;

GALLIUM COMPOUNDS;

EID: 9144262561     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/020     Document Type: Article

References (25)

1. Pearton S J 1993 Int. J. Mod. Phys. B 7 4687
2. Ahmed S, Gwilliam R and Sealy B J 2001 Semicond. Sci. Technol. 16 L28
3. Miao J, Tiginyanu I M, Hartnagel H L, Irmer G, Monecke J and Weiss B L 1997 Appl. Phys. Lett. 70 847
4. Lippen T v, Boudinov H, Tan H H and Jagadish C 1997 Appl. Phys. Lett. 80 264
5. de Souza J P, Danilov I and Boudinov H 1997 J. Appl. Phys. 81 650
6. Lambsdorff M, Kohl J, Rosenzweig J, Axmann A and Schneider 1991 Appl. Phys. Lett. 58 1881
7. Rao M V, Hong W-P, Caneau C, Chang G-K, Papanicolaou N and Dietrich H B 1991 J. Appl. Phys. 70 3943
8. Pons D and Bourgoin J C 1985 J. Phys. C: Solid State Phys. 18 3839
9. Yuba Y, Gamo K, Murakami K and Namba S 1981 Inst. Phys. Conf. Ser. 59 329
10. Goodman S A, Auret F D, Ridgway M and Myburg G 1999 Nucl. Instrum. Methods B 148 446
11. Lang D V 1974 J. Appl. Phys. 45 3023
12. Anders S, Schrenk W, Gornik E and Strasser G 2002 Appl. Phys. Lett. 80 4096
13. Tokranov V, Yakimov M, Katsnelson A, Lamberti M and Oktyabrsky S 2003 Appl. Phys. Lett. 83 833
14. Hohenberg P and Kohn W 1964 Phys. Rev. B 136 864
15. Kohn W and Sham L J 1965 Phys. Rev. A 140 1133
16. Miao Z L et al 2001 J. Crystal Growth 227-8 132
17. Liu X Q, Li Z F, Lu W and Shen S C 1999 Appl. Phys. Lett. 75 2611
18. Yu P Y and Cardona D M 1996 Fundamentals of Semiconductors (Berlin/Heidelberg: Springer)
19. Blakemore J S 1982 J. Appl. Phys. 53 R123
20. Ziegler J F, Biersack J P and Littmark U 1985 The Stopping and Range of Ions in Solids (New York: Pergamon)
21. Northrup J E and Zhang S B 1994 Phys. Rev. B 50 R4692
22. Seong H and Lewis L J 1995 Phys. Rev. B 52 5675
23. Latham C D, Jones R, Oberg S and Briddon P R 2001 Phys. Rev. B 63 155202
24. Kresse G and Furthmuller J 1996 Phys. Rev. B 54 11169
25. Kresse G and Furthmuller J 1996 Comput. Math. Sci. 6 15